Georgia Tech Research Horizons
THE NEXT BIG THING
Making Silicon Nanowires.... Military Meta Materials
Measuring Tiniest of Structures Shining a Light on Cancer
Amazing Metal Nanoclusters Studying Nanostructured Materials
Improving Key Cancer Weapon Nanoscale Optical Structures
The Nanoelectronic Future Microelectronics Fabrication
Teaching Old Process New Tricks Nanobelts Join World of Ultra-small
The Next Big Thing:
Making Silicon Nanowire, Nanotubes and Nanospheres

Silicon and its oxide – silica – find widespread industrial applications and form the backbone of modern microelectronics. Work by Jim Gole, Mark White and collaborators is opening potential new silicon uses in nanocatalysis, nanosensors and nanoelectronics – while blazing a nanoscale trail for materials such as tin oxide and gallium nitride.

Georgia Tech researchers produce high-quality nanostructures from silicon and silica, including bundles of silica fiber (left) and silica nanospheres 30 nanometeres in diameter (right).

Using a simple and flexible high-temperature synthesis technique, the Georgia Tech researchers produce nanowires, nanotubes, nanospheres, "nanodiskettes" and nanofiber arrays from silicon, silica, silicon carbide and tin oxide. Operating at 1,300 to 1,500 degrees Celsius, the vapor-liquid-solid (VLS) process generates structures that are largely defect-free.

"We have developed a simple and generalized technique to make these nanostructures," explains Gole, a professor in the School of Physics. "We can make virtually any structure we want by putting the right materials together in the right spatial configuration under the right conditions."

Researchers vary the gas mixture, pressure, flow rate and starting materials to produce:

The group has also succeeded in placing tin oxide nanocrystallites onto silica nanospheres.

The VLS synthesis process uses double concentric alumina tubes heated in a furnace. Precursor materials, such as a 50-50 mixture of silicon and silica, are placed in a crucible within the tubes, and pressurized argon gas is flowed through. Nanostructures form in a cooled region at one end of the tubes.

The researchers will soon lower their process temperature to accommodate production of gallium nitride structures.

For more information, contact James Gole, School of Physics, Georgia Tech, Atlanta, GA 30332-0430. (Telephone: 404-894-4029) (E-mail: james.gole@physics.gatech.edu); or Zhong Wang, School of Materials, Science and Engineering, Georgia Tech, Atlanta, GA 30332-0245. (Telephone: 404-894-8008) (E-mail: zhong.wang@mse.gatech.edu)


Contents    Research Horizons    GT Research News    GTRI    Georgia Tech

Send questions and comments regarding these pages to Webmaster@gtri.gatech.edu
Last updated: July 14, 2001