The Next Big Thing: Extending the Life of Microelectronics Fabrication
Semiconductors are perhaps the most complex products ever manufactured in volume, each memory or processor chip requiring more than 400 precision steps.
Thanks to increasing miniaturization, each new chip generation packs more capability than the last. Decades ago, Intel founder Gordon Moore set forth the expectation that chip capacity would double every 18 months. Since then, continued gains have fueled dramatic growth in the information technology industry.
But Moore's Law now faces significant technical challenges one of the most important arising from the wavelength of light.
Creating circuits on semiconductor wafers requires a painstaking lithography process. Patterns are produced in a photoresist material using light projected through a mask. Portions of the resist struck by the light become more soluble than the other regions and can be washed away. An etching step then forms the intricate circuitry patterns by removing underlying material not protected by the resist.
Making smaller and smaller devices means using shorter and shorter wavelengths of light. But with feature sizes approaching the nanometer-scale, these shorter wavelengths no longer penetrate through the entire resist layer, setting the stage for failure in the etching step. Ultimately, a whole new process will have to be devised.
"We're not going to be able to do lithography the way we've done it for the past 30 years," notes Dennis Hess, a professor in the School of Chemical Engineering. "It's got to change in the very near future."
Hess and colleagues Cliff Henderson and Laren Tolbert hope to bypass the problems caused by short wavelengths. Their innovation, dubbed surface-initated polymerization, grows resist only where needed atop an extremely thin polymer layer that is activated by light. Alternatively, they can deactivate areas where resist should not be grown.
Because only a thin layer is needed to initiate growth of the resist, shorter wavelengths can be used even into extreme ultraviolet and X-ray regions. So far, they've demonstrated an ability to create patterns and developed a practical resist material. But they still must show that the process can produce the kind of smooth walls, sharp edges and controllable patterns needed by circuit designers.
"We want to show that this is a viable technique for patterning small dimensions," Hess explains. "If it is, there will be a number of people very interested in trying this on actual device wafers."
He estimates that surface-initated polymerization could be implemented within three to five years.
For more information, contact Dennis Hess, School of Chemical Engineering, Georgia Tech, Atlanta, GA 30332-0100. (Telephone: 404-894-5922) (E-mail: dennis.hess@che.gatech.edu)
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Last updated: July 14, 2001